Characterization of InN films grown by plasma-assisted MOMBE

In this paper, we report the growth of InN films on sapphire substrate by RF- MOMBE. GaN buffer layer was used to lower the lattice mismatch between InN and sapphire. XRD patterns indicated that the InN films were grown epitaxially along the c-axis direction. In addition, increasing III/V ratio and growth temperature improve the quality of the InN films as well. However, In droplet will appear on the sample surface under the condition with high III/V ratio. Under optimal growth condition, electron mobility was improved from 100 cm2/V-s to 366 cm2/V-,. Experimental results showed that III/V ratio and growth temperature play important roles in the InN epitaxial growth.