An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3 MOS schottky structure

Charge trapping specially electron trapping phenomenon is observed in GaN/AlGaN/Gd
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O
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MOS schottky structure for first time. Under positive pulse programming, a significant hysteresis window is observed. A 4.4V hysteresis window is observed under +10V@100ms pulse programming. It is worthy to mention that no erase phenomenon is observed, even very large negative bias such as −40V. Only time dependent natural charge loss is observed. Even so, a 1.76V hysteresis window is still remained after 14 hours of retention. It is inferred that our fabricated MOS structure is behaved as a storage node under positive pulse programming. Good charge retention is observed and it may be used as the Write Once Read Many (WORM) memory in future.