A novel technology for in situ MIC growth of low temperature nano/poly silicon thin film on ITO glass substrate

A novel method is applied to grow nano/poly Si thin films on ITO glass at temperature ~200°C. For the first time, through the in situ indium (In)-induced crystallization process, the nano/poly structure can be achieved during the growing amorphous Si by PECVD. SEM, XRD and Raman are used to characterize the deposited films. Besides, the growing mechanisms are also studied.