Photoluminescence spectrum redshifting of porous silicon layers prepared from diamond scratched silicon samples

Porous silicon samples were prepared by an electrochemical etching technique using various n-type and p-type silicon samples with different resistivities. Photoluminescence studies were performed on these porous silicon layers prepared from diamond scratched samples at room temperature. It is found that there is a redshift for these samples when compared to unscratched silicon samples.