10 Gbps, 530 fJ/b optical transceiver circuits in 40 nm CMOS

This paper describes 10 Gbps optical modulator and receiver circuits designed for high energy efficiency in a 40 nm process. The transmitter consumes 135 fJ/b when bonded to an external silicon photonic ring modulator. The receiver, at -15 dBm sensitivity, consumes 395 fJ/b when bonded to an external photodiode.