Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector

The Ion Beam Enhanced Deposited (IBED) LiTaO
₃
thin film infrared detectors with Al/LiTaO
₃
/Pt structure were prepared on the Pt/Ti/SiO
₂
/Si(100) substrate. The crystallization, the film thickness, the dielectric properties, the leakage current and the anti-breakdown ability of the IBED LiTaO
₃
thin film infrared detector samples were investigated by the different annealing processes. The XRD measured results show that, the prepared samples have the polycrystal structure of LiTaO
₃
with the preferred orientation of <;012>; and <;104>; located at the 2theta of 23.6° and 32.7° respectively. The residual Ta
₂
O
₅
has been existed in the prepared samples owe to the Li volatilization during the high temperature annealing process. The obtained 587nm thick IBED LiTaO
₃
thin film infrared detector sample annealed at 550°C has the dielectric permittivity of 39.44, the low dielectric loss of 0.045 at the tested frequency of 100 kHz, and the small current leakage of 4.76×10
^-8
A/cm
²
when subjected to the tested electrical field of 400kV/cm. The electrical breakdown experimental results show that the prepared detector samples have strong ability of anti-breakdown and can be subjected to the stronggest electrical field of 680kV/cm. The experimental results show that, the dielectric loss and the leakage current of the IBED LiTaO
₃
thin film infrared detectors are better than those of the Sol-Gel derived LiTaO
₃
thin film infrared detectors.