Electronic global shutter CMOS image sensor using oxide semiconductor FET with extremely low off-state current

A novel CMOS image sensor including a pixel with a hybrid structure of an oxide semiconductor FET (OS-FET) and Si(SOI)-FETs has been developed. The OS-FET has an extremely low off-state current, and thus can form a highly insulating charge storage node in combination with SOI. We have therefore applied the OS-FET to an electronic global shutter CMOS image sensor and confirmed improvement in imaging quality.