Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials

We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin V
_m
, ultra-low leakage (<;10pA), and much higher endurance (>;10
⁸
) at high current densities. Using CMP, all-good 5×10 AD arrays with V
_m
>; 1.1V are demonstrated in a simplified CMOS-compatible diode-in-via (DIV) process.