1mA/um-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D

A 2
^nd
generation of Implant Free Quantum Well pFETs is presented in this work. SiGe
_25%
-embedded Source/Drain was implemented, leading to an excellent short channel control and logic performance (1mA/um-I
_ON
@-1V). No narrow-width effect was found and a multi-V
_TH
strategy is also offered. Performance of the strained-IFQW pFETs was finally demonstrated at lower V
_DD
.