CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding

We have successfully demonstrated the CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate, by using direct wafer bonding (DWB), for the first time. Ni-based metal S/D allows us to fabricate high performance nMOSFETs and pMOSFETs simultaneously at the single-step S/D formation process. The fabricated InGaAs nMOSFET and Ge pMOSFET have exhibited the high electron and hole mobilities of 1800 and 260 cm
²
/Vs and the mobility enhancement against Si of 3.5× and 2.3×, respectively.