High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering

We have demonstrated the extremely thin body (ETB) In
_0.7
Ga
_0.3
As-on-insulator (-OI) MOSFETs on Si substrates with Ni-InGaAs S/D structures. It has been found that low doping concentrations, In-rich channels (In
_0.7
Ga
_0.3
As), and buffer engineering provide high mobility of 2810 cm
²
/Vs even the total InGaAs thickness of 10 nm. This is the first demonstration of ETB III-V-OI MOSFETs combined with the Schottky-barrier free metal S/D technology. We have also achieved excellent I
_D
-V
_G
characteristics with I
_on
/I
_off
ratio of over 10
⁷
and low S.S. of 103 mV/dec in 2/1/3 nm-thick InGaAs MOSFETs with buffer layers.