Bi-layered RRAM with unlimited endurance and extremely uniform switching

We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 10
¹¹
cycles at 30ns, data retention of >;10
⁴
s at 200°C, and calculated bit error rate below 10
^-11
.