Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array

For the first time, very fast (10ns at even Reset) and high reliable (150°C 100h) ReRAM memory was demonstrated at 54 nm 256k bits array. Reset current successfully decreased up to 20uA using Al
2
O
3
which acts as a tunnel barrier and filament source in TiO
2
/Al
2
O
3
stack. From statistical analysis, the possibility of increasing array size and the key factor of resistance distribution were investigated.