Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

We report the first AlOx-based resistive switching memory (RRAM) using carbon nanotubes (CNT) as contact electrodes. CNTs with average diameter of 1.2nm effectively localize the conduction filaments (CFs). The Al/AlOx/CNT device successfully switches over 10
⁴
cycles with less than 5μA programming current. Extreme scaling of the device down to 6nm×6nm is realized by the CNT/AlOx/CNT cross-point structure and 10
⁴
switching cycles are achieved. This work is the first step toward RRAM with nm-scale electrodes. It paves the way for future high density, low power non-volatile RRAM memory application.