A snap-back suppressed shorted-anode lateral trench insulated gate bipolar transistor (LTIGBT) with insulated trench collector

A shorted anode insulated gate bipolar transistor (SA-LIGBT) has a negative differential resistance (NDR) region that causes undesirable operation of the device and increases the on-state voltage drop. We propose a lateral trench gate IGBT (LTIGBT) structure that has an insulated trench collector. The insulated trench collector can be formed when the trench gate is formed. The insulated trench collector reduces the NDR region without stretching the width of the device. The proposed SA-LTIGBT has a lower snap-back voltage than conventional SA-LTIGBT. The breakdown voltage and turn-off time do not degenerate, in contrast to a conventional SA-LTIGBT. We analyzed the proposed device using two-dimensional numerical simulation.