Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric

We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al
₂
O
₃
gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielectric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device parameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.