Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys

In this work, Ni-InP alloys formed by direct reaction between Ni and InP were evaluated as a S/D metal material. The sheet resistance of Ni-InP has found to be 35-90 Ω/square, less than that of doped N+ layer formed by ion implantation, conventional method for S/D formation. The Ni-InP alloys also show ohmic and Schottky behavior for unintentionally doped InP (lightly n-InP) and p-InP, respectively. Using this novel material of Ni-InP, InP MOSFETs with the self-aligned metal S/D structure were fabricated with the process temperature under 300°C. MOSFETs shows normal transistor behavior with high I
_on
/I
_off
ratio of 10
⁶
and low subthreshold swing of 120 mV/dec attributable to Ni-InP/InP junctions.