100nm-gate-length In0.47Ga0.53As multi-gate MOSFET: Fabrication and characterisation

In this paper, multi-gate In
_0.47
Ga
_0.53
As MOSFETs with different numbers of fingers (4, 8 and 16) and different gate length were fabricated by using air-bridge technology. The devices were made by self-aligned method with gate deposition at first. For MOSFET with a gate length of 100nm, a maximum drain current of 120mA/mm, and a maximum transconductance of 75mS/mm were achieved at room temperature. A cut-off frequency of 100GHz, and a maximum oscillation frequency of 31 GHZ were extracted for device with 16 fingers.