Front-end-of-line quadrature-clocked voltage-dependent capacitance measurement

We report on Front-End-Of-Line Quadrature-clocked Voltage-dependent Capacitance Measurement (QVCM), a charge based capacitance measurement technique applicable to modern logic CMOS technologies with leaky gate oxides. QVCM test structures are designed using only first level of metal and support parallel test of multiple devices. Results for 45 nm SOI FETs illustrate the power of the developed technique.