Novel BJT test structure for high-performance matching characteristics in CMOS-based analog applications

A novel test structure of bipolar junction transistors fabricated using CMOS technology is proposed for high-performance analog applications. The matching characteristics of collector current I
_C
and current gain β of the proposed structure show improvement of about 31% and 24%, respectively, over those of the conventional structure, although the area of the proposed structure is smaller than that of the conventional structure. The proposed structure exhibits a decrease in collector current and current gain of less than 7.4% and 1.8%, respectively, compared with the conventional structure. The proposed test structure is highly promising for CMOS-based, high-performance, analog applications.