Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models

An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance
R
_bx
extraction from forward active
S
-parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance found in III-V HBTs with a fully depleted collector. It is shown that the real part of
Z
₁₁
-
Z
₁₂
reduces to the external base resistance at the collector current
Ic
=
Ip
/(1 -
X
₀
), where
Ip
is a characteristic current and
X
₀
is the zero-current distribution factor given as the ratio of the emitter to the collector area. The determination of the parameters
Ip
and
X
₀
from experimental
S
-parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured
S
-parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz.