A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application

This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain load pull measurement performed on a packaged transistor. The model has been validated by pulsed RF measurement in the optimum area for several frequencies.