Time-resolved photoluminescence and optical gain of Ga(NAsP) heterostructures pseudomorphically grown on silicon (001) substrate

The novel metastable dilute nitride material Ga(NAsP) is a very promising candidate for electrically pumped lasers on silicon because it can be pseudomorphically grown on silicon substrate. Here we investigate the optical properties of a series of multi-quantum well Ga(NAsP) samples grown lattice matched on GaP and Si substrates. Temperature and excitation resolved photoluminescence spectroscopy indicates a significant impact of disorder-induced carrier localization effects on the optical properties. On the other hand, optical gain measurements reveal high modal gain up to 80 cm
^-1
at room temperature and demonstrate the suitability of this new material as an active material for laser devices. A comparative analysis of optical gain and photoluminescence data demonstrates a strong impact of the barrier-growth conditions on the optical quality of the material.