Influence of surface passivation on B, B18H22 and B36H44 retained dose for USJ

The authors conclude that the measured boron dose loss was not due to surface sputter etching but rather back-scattering for zero degree tilt implantation and reflection for 45 degree tilt implantation. Increase in surface oxide thickness by as much as 0.9nm was detected for molecular B-dopant species. Highest retained dose was observed with hydrogen surface passivation especially for monomer B implantation and decreases with increasing surface oxide thickness.