Laser annealed SiGe devices for MEMS applications at temperatures below 250°C

This work reports, for the first time, on the use of a post deposition laser annealing technique to realize SiGe MEMS devices at deposition temperatures as low as 210°C. It is demonstrated that by tuning the laser annealing conditions it is possible to realize SiGe devices with good electrical properties, including contact resistivity values to a TiN electrode as low as 4.9×10
^-7
Ωcm
²
, and good mechanical properties, with a strain gradient of -1.6×10
^-6
μm
^-1
. Furthermore, this technique is used to fabricate an array of functional capacitive pressure sensors at low temperature.