Computational analysis of flow field in GaAs-MOCVD vertical rotating disk reactor

This paper gives a detailed analysis and discussion of the flow field inside the type of D125 MOCVD reactor chamber through the analysis of three-dimensional mathematical model and calculation. Under a wide range of geometric and process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, and wafer carrier rotation. It is finally obtained the favorable conditions of the uniform distributions of velocity profiles inside the reactor. The CFD simulating results are beneficial to fixing on the process operating conditions document.