A 155-GHz monolithic InP-based HEMT amplifier

This paper presents the development, of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1-/spl mu/m pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 153-155 GHz, and more than 10-dB gain from 151 to 156 GHz. This is the highest frequency amplifier ever reported using three terminal devices.