Turn-on process in 4H-SiC thyristors

Detailed turn-on measurements of 4H-Silicon Carbide (SiC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SiC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8/spl times/10/sup 3/ A/cm/sup 2/) SiC thyristor has been found to be of the order of 3-5 ns. Pulsed turn on measurements show a residual voltage of only 50 V when a current density of 10/sup 5/ A/cm/sup 2/ (35 A) was achieved in 20 ns.