Optimization of bulk GaAs Substrate removed electrooptic modulator using the Finite Element Method

Summary from only given. In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, VπL as low as 5 V-cm and electrical bandwidth as high as 220 GHz.