Highly efficient InGaN/GaN blue LED grown on Si (111) substrate

For the first time, based on the high crystalline quality of n-GaN on Si template, highly efficient InGaN/GaN LEDs grown on 4-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. At driving current of 350 mA, the overall output power of 1 × 1 mm
²
LED chips exceeded 420 mW and forward voltage was 3.2 V under un-encapsulated condition, which is the best value among the reported values of blue LED grown on Si substrates. The internal quantum efficiency of 76% at injection current of 350 mAwas measured.