Three-dimensional CMOS integration

The advantages of CMOS technology are examined, and problems of and approaches to 3-D integration are discussed. Particular attention is given to silicon-on-insulator (SOI) technology and the use of selective epitaxial growth (SEG) and epitaxial lateral overgrowth (ELO) of monocrystalline silicon. The fabrication of 3-D CMOS devices using these techniques is described.<
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