Wideband high efficiency envelope tracking integrated circuit for micro-base station power amplifiers

This paper presents a high performance BCD (Bipolar-CMOS-DMOS) monolithic envelope tracking IC to achieve high efficiency and linearity for micro-base station power amplifier applications. Measurement of the BCD high voltage (Vdd = 15 V) envelope amplifier shows an efficiency of 72% using WCDMA input signals (7.7 dB PAR). An envelope tracking power amplifier including a GaN FET RF stage has overall drain efficiency (DE) above 51%, with a normalized power RMS error below 1.2% and ACLR1 of -49 dBc using memory mitigation digital pre-distortion (DPD), at an average WCDMA output power above 2 W and a gain of 10 dB.