Integration of dense CNTs in vias on 200mm diameter wafers: Study of post CNT growth processes

This paper presents the integration of dense (2.5 10
¹²
CNTs/cm
²
) Carbon Nanotubes in via structures for future microelectronic interconnects generations. Process steps performed after CNT growth in vias are studied. Two different CNT encapsulation layers are evaluated (ALD Al
₂
O
₃
and spin on resist). After polishing, well planarized CNTs vias structures are obtained in both cases. Post CMP clean is performed to improve CNT/top metal contact. Top metal realisation is on-going and electrical results will help to select which encapsulation is the best.