A 50-ns CMOS 256 K EEPROM

A 32 K*8 EEPROM (electrically erasable programmable read-only memory), which operates with a single 5-V power supply and achieves 100 K cycle endurance, 50-ns typical read access time, and 1-ms page programming time, equivalent to 16 mu s/byte, was designed. A double-poly, double-metal, n-well CMOS process with 1.25- mu m minimum feature size was developed to manufacture the device. The required and optional extended JEDEC standards for software data protection and chip clear are implemented along with parity check, toggle bit, page-load timer, and data-protection status bit. A modified Hamming code, which uses four parity bits per byte, was implemented to detect and correct single-bit errors.<
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