Normally on reflection-type two-wavelength quantum-well modulator with balanced cavity design

We have demonstrated a AlGaAs-AlAs DBR reflection-type two-wavelength modulator with a novel balanced cavity design. Simultaneous operations at wavelengths of around 860 and 896 nm have been achieved. By using such a new cavity design similar operating voltages have been obtained for both wavelengths. Under separate biasing voltages of 14.5 and 11 V on each quantum-well absorbing region, the maximum reflectivity changes were around 50%.