Low-threshold proton-implanted 1.3-μm vertical-cavity top-surface-emitting lasers with dielectric and wafer-bonded GaAs-AlAs Bragg mirrors

We demonstrate a new structure for long-wavelength (1.3-μm) vertical-cavity top-surface-emitting lasers using proton implantation for current confinement. Wafer bonded GaAs-AlAs Bragg mirrors and dielectric mirrors are used for bottom and top mirrors, respectively. The gain medium of the lasers consists of nine strain-compensated AlGaInAs quantum wells. A record low room temperature pulsed threshold current density of 1.13 kA/cm
²
has been achieved for 15-μm diameter devices with a threshold current of 2 mA. The side-mode-suppression-ratio is greater than 35 dB.