Preparation and research on performance of multi-layer Bi/Sb composite nano-film

In this paper, the preparation techniques of multi-layer Bi/Sb composite semiconductor nano-film were developed with single-crystal silicon as thermal insulation substrate and Bi/Sb as sputter targets using magnetron sputtering. Four kinds of semiconductor nano-film were fabricated with the different Bi/Sb modulation ratios which respectively equaled 1∶4, 3∶2, 4∶1, 1∶4 and the modulation period was fixed on 40nm. And then, the Seebeck coefficient, electric conductivity and power factor of the semiconductor nano-film were tested with the variation of temperature which ranged from 160K to 250K. The experimental results indicated that the Seebeck coefficient and the power factor reached the maximum values of 2.48µV/K and 26.5µW/mK² at 235K.