Low power transmitter experimental prototype and simulation for personal access communications system (PACS)

In this paper, we look at the benefit of using InP semiconductor technology for RF power amplifiers to improve their overall linearity and efficiency. Experimental prototype and simulation results for a PACS subscriber unit (SU) transmitter RF power amplifier are presented. The role of power amplifier nonlinearity on the emission spectral spreading and the adjacent channel interfered power ratio (ACPR) variations is demonstrated for GaAs FET, GaAs HBT, and InP HBT technologies. A technique to improve the amplifier power added efficiency (PAE) and simultaneously reduce the battery consumption current is suggested and verified by simulation.