A 0.8-/spl mu/m BiCMOS technology for ASIC applications

A novel process is demonstrated for a 0.8-/spl mu/m BiCMOS process flow by forming a base oxide for NPN transistors using high-pressure oxidation. This process allows improved control over the base implant dose, in the depth of the peak dose, in the precise control of the amount of implant, and in spread of the dose due to thermal processing. Data showing the advantages of this process flow are presented, and some circuit information is given.