A SiC Static Induction Transistor (SIT) technology for pulsed RF power amplifiers

A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3” 4H-SiC epitaxial wafers. L-band performance is presented based on the prototype transistor unit cells. An improved transistor architecture is proposed to further boost frequency and power performance.