High speed 650V IGBTs for DC-DC conversion up to 200 kHz

The increasing demand for higher power density and lower cost in high voltage power supplies has driven semiconductor manufacturers to expand IGBT performance for high switching frequency beyond 100 kHz. An ultra thin punch-through IGBT with a blocking voltage of 650V has been developed and optimized targeting DC-DC conversion up to 200 kHz. Its high Tjmax of 175°C further enhances the converter compactness. This paper describes the feature of this ultra fast IGBT in a critical comparison with equivalent products available on the market today.