Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications

This paper describes a new wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications. This technology is capable of integrating 35V, 60V, and 80V Nch and Pch LDMOS, 35V BJT, and 6V CMOS devices on a single chip. The devices are completely isolated dielectrically using both deep trench isolation (DTI) and a buried oxide (BOX) layer in a silicon-on-insulator (SOI) wafer for stable operation at high temperatures up to 175°C. The devices were developed using a 0.35μm process. In particular, the LDMOS devices have achieved competitive levels of low Ron*A and good SOA.