Measurements and simulations of breakdown phenomena in a voltage-scalable smart power complementary BiCMOS process

Good agreement between 2-D simulations and experiments of device parameters, especially breakdown voltages, allows voltage scaling against cutoff frequency. Measurements and simulations of breakdown phenomena in vertical NPN transistors fabricated with a voltage-scalable smart power complementary BiCMOS process show that the open base and the open emitter breakdown occur at different spatial positions in the device structure.