Surface processing of TlBr for improved gamma spectroscopy

Planar detectors have been fabricated on 0.5 mm thick TlBr crystals grown by Radiation Monitoring Devices (RMD). The crystals have been characterized by microhardness measurements. A surface damage layer resulting from mechanical polishing has been measured to be approximately 3.7 μm thick. We have removed this layer with H
₂
O
₂
chemical etching and compared device performance with and without the presence of the surface damage layer and found significant differences in the initial and long term current-voltage behavior and radiation response. Detectors treated with H
₂
O
₂
to remove this layer have been shown to display superior performance as compared to unetched detectors followed a period of “field annealing”.