Evaluation of monolithic Silicon-on-Insulator pixel devices thinned to 100 μm

We are developing monolithic pixel devices utilizing a 0.2 μm Fully Depleted Silicon-on-Insulator (FD-SOI) process technology provided by OKI Semiconductor. We have investigated thinning the devices to 100 μm. Thinning enhances the feature of monolithic SOI sensors in views of minimizing the overall material and realizing full depleted devices. The latter is necessary for backside illumination, which is desirable to enhance the photo sensitivity. The wafer was thinned commercially by DISCO Corp. Small increase in the leakage current was observed associated with the thinning process. Excellent performance to infrared and red laser lights was obtained, demonstrating realization of the fully depleted pixel device.