Punch-through effect and collapse of the electric field in silicon strip detectors

The punch-through protection mechanism should prevent the implants of silicon detectors from floating to arbitrarily high voltages in case of possible beam loss accidents. Typical characterization of the punch-through effect is carried out by applying an external voltage between an implant and the bias rail and measuring the resulting current. Future work will focus on quantitative understanding of the PT effect in ATLAS07 sensors, testing structures with different implantation dozes, looking at irradiated sensors, and investigating effect of backplane voltage RC bypass filter on the implant high voltages we have observed.