Characterization and Physical Modeling of Endurance in Embedded Non-Volatile Memory Technology

Transient and endurance mechanisms in high performance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is pro posed to discriminate the effects of defects on program/erase (P/E) efficiencies and on DC characteristics. A semi-analytical multiphonon-assisted charge trapping model is used to investigate the role and the impact of trapped charges on channel hot electron injection and Fowler-Nordheim efficiencies, threshold voltage variations and endurance characteristics.