Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

In this work we investigate the correlation between hydrogen content and leakage current through the Al
₂
O
₃
layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al
₂
O
₃
layer. Using atomistic simulations consolidated by detailed Al
₂
O
₃
physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.