Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (v
_inj
) and ballistic efficiency (B
_sat
). DSS device with low series source/drain resistance and high B
_sat
of 0.47 leads to +15.2% of I
_d
enhancement over the conventional MOSFET. The VSM demonstrates more accurate B
_sat
and v
_inj
results than the conventional Temperature Dependent Method(TDM) ones.