Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs | IEEE Conference Publication | IEEE Xplore
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Experimental determination of the transport parameters in high performance Dopant-Segregated Schottky-barrier MOSFETs

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X. S. Cheng; E. R. Hsieh; Steve S. Chung; C. H. Tsai; T. L. Tsai; W. T. Chiang
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Abstract:

A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VS...Show More

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Abstract:

A new approach has been developed to investigate the carrier transport characteristics of Dopant-Segregated Schottky (DSS) barrier MOSFET. A Velocity Saturation Model (VSM) based on experimentally measurements has been developed to determine the injection velocity (vinj) and ballistic efficiency (Bsat). DSS device with low series source/drain resistance and high Bsat of 0.47 leads to +15.2% of Id enhancement over the conventional MOSFET. The VSM demonstrates more accurate Bsat and vinj results than the conventional Temperature Dependent Method(TDM) ones.
Published in: Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
Date of Conference: 25-27 April 2011
Date Added to IEEE Xplore: 09 June 2011
ISBN Information:
Print ISSN: 1524-766X
DOI: 10.1109/VTSA.2011.5872257
Conference Location: Hsinchu, Taiwan
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