High temperature millisecond silicide anneal for contact resistivity < 10−8 Ωcm2

A novel high temperature silicide process using millisecond anneal is reported. Superior thermal stability, film properties (Rs, surface roughness) and low contact resistivity to n+ silicon of <; 1 Ωμm
²
is demonstrated with milli-second silicide anneal which results in grain size change and potential strain incorporation resulting in overall enhanced performance.